SI7792DP-T1-GE3 | |
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Inombolo yendawo | SI7792DP-T1-GE3 |
Umenzi | Vishay Siliconix |
Inkcazo | MOSFET N-CH 30V 40.6A/60A PPAK |
Ubungakanani obukhoyo | 2575 pcs new original in stock. Cela iStock & Quotation |
Imodeli ye-ECAD | |
Maxwebhu | 1.SI7792DP-T1-GE3.pdf2.SI7792DP-T1-GE3.pdf |
SI7792DP-T1-GE3 Price |
Ixabiso lentengo kunye nexesha leNkokheli kwi-Intanethi or Email us: Info@ariat-tech.com |
Ulwazi lwezobuchwepheshe lweSI7792DP-T1-GE3 | |||
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Inombolo yecandelo lomenzi | SI7792DP-T1-GE3 | Udidi | |
Umenzi | Electro-Films (EFI) / Vishay | Inkcazo | MOSFET N-CH 30V 40.6A/60A PPAK |
Iphakheji / Iimeko | PowerPAK® SO-8 | Ubungakanani obukhoyo | 2575 pcs |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±20V |
Te knoloji | MOSFET (Metal Oxide) | Iphakheji yeCandelo leNkonzo | PowerPAK® SO-8 |
Uchungechunge | SkyFET®, TrenchFET® Gen III | Amacandelo On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
Ukutshatyalaliswa kwamandla (uMax) | 6.25W (Ta), 104W (Tc) | Iphakheji / Iimeko | PowerPAK® SO-8 |
Iphakheji | Tape & Reel (TR) | Ukushisa okusebenzayo | -55°C ~ 150°C (TJ) |
Uhlobo lokuPhakamisa | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 4735 pF @ 15 V |
Isango lokuTyala (Qg) (Max) @ Vgs | 135 nC @ 10 V | Uhlobo lweFET | N-Channel |
IFET | Schottky Diode (Body) | Umbane weDrayivu (i-Max Rds On, i-Min Rds On) | 4.5V, 10V |
Ukukhenkca kumthombo weVolt (Vdss) | 30 V | Ukuhlamba okuqhubekayo (i-Id) @ 25 ° C | 40.6A (Ta), 60A (Tc) |
Inombolo yemveliso yemveliso | SI7792 | ||
Ukukhuphela | SI7792DP-T1-GE3 PDF - EN.pdf |
Ivenkile ye-SI7792DP-T1-GE3 | Ixabiso leSI7792DP-T1-GE3 | I-ESI7792DP-T1-GE3 Elektroniki | |||
Izinto zeSI7792DP-T1-GE3 | Uluhlu lwe-SI7792DP-T1-GE3 | SI7792DP-T1-GE3 Digikey | |||
Umboneleli SI7792DP-T1-GE3 | I-odolo SI7792DP-T1-GE3 kwi-Intanethi | Imibuzo SI7792DP-T1-GE3 | |||
Umfanekiso we-SI7792DP-T1-GE3 | Umboniso we-SI7792DP-T1-GE3 | I-SI7792DP-T1-GE3 PDF | |||
Idatha ye-SI7792DP-T1-GE3 | Khuphela iDatasheet yeSI7792DP-T1-GE3 | Umvelisi we-Electro-Films (EFI) / Vishay |
Iziqhagamshelana zeSI7792DP-T1-GE3 | |||||
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Umfanekiso | Inombolo yendawo | Inkcazo | Umenzi | Fumana i-Quote | |
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SI7802DN-T1-GE3 | MOSFET N-CH 250V 1.24A PPAK | Vishay Siliconix | ||
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SI7790DP-T1-GE3 MOS | VISHAY PowerPAKSO-8 | VISHAY | ||
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SI7802DN | SI7802DN SI | SI | ||
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SI7784DP-T1-GE3 | MOSFET N-CH 30V 35A PPAK SO-8 | Vishay Siliconix | ||
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SI7802DN-T1-E3 | MOSFET N-CH 250V 1.24A 1212-8 | Electro-Films (EFI) / Vishay | ||
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SI7804DN | SI7804DN SI | SI | ||
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SI7784DP | VISHAY | |||
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SI7794DP-T1-GE3 | MOSFET N-CH 30V 28.6A/60A PPAK | Vishay Siliconix | ||
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SI7790DP-T1-GE3 | MOSFET N-CH 40V 50A PPAK SO-8 | Electro-Films (EFI) / Vishay | ||
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Si7790DP-T1-E3 | Si7790DP-T1-E3 VISHAY | VISHAY | ||
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SI7802DN-T1-GE3 | MOSFET N-CH 250V 1.24A 1212-8 | Electro-Films (EFI) / Vishay | ||
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SI7798DP-T1-GE3 | SI7798DP-T1-GE3 VISHAY | VISHAY | ||
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SI7788DP-T1-GE3 MOS | VBSEMI QFN8 | VBSEMI | ||
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SI7788DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | Electro-Films (EFI) / Vishay | ||
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SI7800ADN | SI7800ADN SI | SI | ||
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SI7788DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | Vishay Siliconix | ||
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SI7804DN-T1-E3 | MOSFET N-CH 30V 6.5A PPAK1212-8 | Vishay Siliconix |
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